Cu^(2+)离子掺杂纳米SiO_2材料中346nm光致发光带

LUMINESCENCE AT 346 nm IN SiO_2 NANOPOWDER DOPED WITH Cu^(2+)IONS

采用溶胶凝胶技术制备了Cu^(2+)掺杂纳米Si O_2材料,测量了材料的光致发光性能。X射线衍射及透射电子显微镜测试结果表明:Cu^(2+)掺杂纳米Si O_2材料具有微晶结构,颗粒尺寸为20~30nm。对其光致发光谱的测定显示:微量Cu^(2+)掺杂的样品在220nm激发时存在着唯一的很强主峰,位于346nm左右的紫外发光峰。通过对比不同掺杂浓度、不同煅烧温度及氢化处理对该紫外峰的影响,对346nm紫外发光峰可能的起源进行了初步探讨。

Cu^2＋ doped SiO2 nanopowder was prepared by the sol -gel technology, and the luminescence property of the nanopowder was determined. The results of X-ray diffraction and transmission electron microscopy observation indicate that the particle size of Cu^2＋ doped SiO2 nanopowder with a microcrystalline structure is about 20 30 nm. The photoluminescence spectrum shows that there is only one strong peak at a wavelength of 346 nm in Cu^2＋ doped SiO2 excited at 220 nm. By comparing the effects of different doping concentrations, heat treatment temperatures and hydrogenation treatment on the violet peak, the possible cause for the production of a violet emission peak at 346 nm was investigated.