期刊文献+

浮法玻璃下表面渗锡的X射线光电子谱 被引量:3

X-RAY PHOTOELECTRON SPECTROSCOPY ANALYSIS ON TIN PERMEATED FLOAT GIASS
下载PDF
导出
摘要 利用X射线光电子谱仪(X-ray photoelectron spectroscopy,XPS)对国内外浮法玻璃样品(样品A和样品B)下表面渗锡情况进行了对比分析。结果表明:在浮法玻璃下表面900nm范围内,2种样品中的锡离子在渗锡面均以Sn0,Sn^(2+),Sn^(4+)3种价态存在,Sn^(2+)在整个渗锡量中均占最大比例。在近表面区,渗锡均以Sn^(2+)态为主,Sn0和Sn^(2+)含量之和均占到总渗锡量的90%以上,且样品A渗锡量远远高于样品B的渗锡量。样品A的不同锡离子相对含量沿深度变化较大,而样品B的不同锡离子相对含量沿深度变化小于1%。结合扫描电子显微镜形貌观察可知:钢化虹彩现象是由钢化处理中,Sn^(2+)转变为Sn^(4+)的氧化反应导致的体积膨胀引起的。在该反应过程中单胞体积增大3%。综合XPS与钢化虹彩实验结果可知,XPS分析可以有效而精确地提供浮法玻璃中锡的价态以及含量信息。 X-ray photoelectron spectroscopy analysis (XPS) was used to analyze the tin ion permeation near the surface of different float glass samples. The results show that in the range of the experiment, tin in both samples tested exists in three states, i.e. Sn^0 , Sn^2+ and Sn^4+ , where Sn^2+ counts for the majority in total tin content. In the near surface of float glass, tin normally exists in Sn^2+, contents of Sn^0 and Sn^2+ are over 90% of tin total amount. The tin content in samples produced by Chinese float process is much higher than that produced by foreign float process. The relative proportions of different tin ions in Chinese float glass samples vary greatly, while the variation of the relative proportion of different tin ions in different depths for foreign samples are smaller than 1%. The scanning electron microscopy analysis shows that the bloom phenomenon in the annealing process of float glass is induced by the volume expansion due to the oxidation reaction of Sn^2+ to Sn^4+ , in which the cell volume is increased 3%. According to the results of the XPS and the bloom phenomenon, the XPS method is an efficient and accurate method to obtain information of the value and content of tin ions in float glass.
机构地区 燕山大学
出处 《硅酸盐学报》 EI CAS CSCD 北大核心 2005年第12期1535-1538,共4页 Journal of The Chinese Ceramic Society
基金 建材科技专项基金(970051)资助项目。~~
关键词 浮法玻璃 X射线光电子谱 钢化虹彩 float glass tin X-ray photoelectron spectroscopy bloom phenomenon
  • 相关文献

参考文献5

  • 1HAYASHI Y,MATSUMOTO K,KUDO M,et al.The diffusion mechanism of tin into glass governed by redox reactions during the float process [J].J Non-Cryst Solids,2001,282:188-196.
  • 2FRISCHAT H G.Tin ions in float glass cause anomalies [J].C R Chimie,2002,5:759-763.
  • 3马振珠,刘元新,王廷籍.浮法玻璃渗锡量的测量方法[J].硅酸盐学报,2004,32(5):649-651. 被引量:4
  • 4WILLIMAS K F E,JOHNSON C E.Characterization of tin at the surface of float glass[J].J Non-Cryst Solids,1997,211:164-172.
  • 5Accelrys Inc.Introduction to Materials Studio Program[R].San Diego:Accelrys Inc,2002.p18.

二级参考文献8

  • 1[1]WANG T J, YAN L M, TANG Y Q. Dielectric behavior in the float glass[J]. Phys Chem Glasses, 1998, 39(2):87-90.
  • 2[2]TAKEDA S, AKIYAMA R, HOSONO H. Formation of nanosized SnO2 colloids and change in Sn-depth profile in float glass induced by oxygen diffusion from atmosphere at temperature above Tg[J]. J NomCryst Solids, 2001, 281:1-5.
  • 3[3]HAYASHI Y, MATSUMOTO K, KUDO M. The diffusion mechanism of tin into glass governed by redox reactions during the float process[J]. J Non-Cryst Solids, 2001, 282:188-196.
  • 4[4]WANG TJ. Penetration of tin in the surface of float glass[J].Glass Technol, 1997, 38 (3):104-106.
  • 5[5]MA Z Z,YUAN T S, WANG T J, et al. Bloom of float glass[J].Glass Technol, 2002, 43(6):245-250.
  • 6[6]WANG T J, ZHANG G W, YUAN T S. Computer modeling of satellite peak in tin profile of float glass[J]. J Non-Cryst Solids, 2000, 271:126-136.
  • 7[7]TOWNSEND P D, CANN, CHANDLERPJ, et al Comparisons of tin depth profile analyses in float glass[J]. J Non-Cryst Solids,1998, 223:73-85.
  • 8[8]WILLIAMS K F E, JOHNSON C E, GREENGRASS J, et al.Tin oxidation state, depth profiles of Sn2+ and Sn4+ and oxygen diffusivity in float glass by Mossbauer spectroscopy[J]. J Non-Cryst Solids, 1997, 211:164-172.

共引文献3

同被引文献13

引证文献3

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部