脉冲真空放电离子密度的测量

Measuring the ion density of pulsed vacuum arc source

由于采用脉冲放电沉积技术能够克服连续电弧离子镀沉积时产生的液滴及负偏压放电的缺点,特别是它在镀制类金刚石薄膜中显示出来的独特性能:不含氢和硬度高,使其在薄膜沉积技术中越来越受到广大研究者的重视。为了更深入地研究薄膜的沉积工艺和薄膜性能之间的关系,迫切需要对脉冲真空放电等离子体的微观参数进行深入透彻的研究,如离子密度及其空间分布等。本文介绍了测量脉冲真空电弧离子源离子密度的方法,并采用该方法测量了脉冲真空电弧离子源离子密度及其空间分布,分析和研究了影响离子空间分布的各种参数。

More and more importance is paying to the pulsed vacuum are ion deposition for its attractive advantages, such as no droplets formed and no minus bias discharging during continuous arcing, especially no hydrogen found and very high hardness available in DLC films deposition. To investigate in depth the relationship between the film properties and technological process of deposition, it is necessary to make sure the microcosmic parameters of plasma, such as ion density and spatial distribution of ions. So, how to measure the ion density of pulsed vacuum arc source is introduced, as well as the measurement of ion density and spatial distribution of ions. Discusses the parameters influencing the spatial distribution of ions.