MOS器件时间关联辐射响应的理论研究

Theoretic Research on Time-Dependent Radiation Response of MOSFET

利用响应函数对MOS器件时间关联辐射响应几个物理过程的实验数据进行拟合计算,包括空穴输运引起的短期恢复、深层俘获空穴引起的长期恢复以及界面态的长期建立。详细分析了俘获空穴的空间分布差异对退火响应的影响以及温度差异对界面态建立的影响。计算结果和实验测量值符合很好,表明该函数在响应分析中的应用是可行的。

Response function is physical processes of time-depe short-term recovery due to hole utilized to ndent radia transport, fit experimental data for several important tion response of MOSFET, including the the long term recovery due to trapped hole anneal and the long-term buildup of interface traps. The fitting procedure and results are presented. It is discussed in detail how the spatial distribution difference of trapped holes affects annealing response and the varying temperature affects buildup of interface state. The agreement is excellent, and this function is suitable to analyse MOS radiation effect.