掺硼金刚石膜的电火花加工研究

EDM of B-doped CVD Diamond Film

由于金刚石膜的加工极其困难,提出了一种通过在制备过程中掺杂使金刚石膜导电的金刚石膜精加工新工艺,利用电火花对掺杂金刚石膜进行电加工。研究了电参数对金刚石膜加工性能的影响,用SEM和Raman分析了金刚石膜电火花加工表面的形貌和成分。研究了掺硼金刚石膜电火花加工的加工机理,建立了电火花加工模型。试验结果表明,电参数对金刚石膜的加工速度、表面粗糙度有较大影响,掺杂金刚石膜的电火花加工是汽化、熔化、氧化、石墨化等多种效应的综合作用结果,通过掺杂可以显著改善金刚石膜的可加工性。

Because of the difficulties in machining chemical vapor deposition （CVD） diamond films, a new technology to improve the machinability of CVD diamond film by doping was proposed for the first time. During the CVD deposition process, B was doped in the diamond to fabricate high--quality seml--conducting film, which made it possible to machine diamond film by electrical discharged ma- chining （EDM）. The relationship among EDM electrical parameters and the removal process was investigated in details. The machined surfaces of B--doped diamond films were studied by Scanning Electron Microscope （SEM） and Raman Scattering Spectroscopy （Raman）. The machining mechanism and model were studied. The experimental results show that the EDM of B--doped CVD diamond film is a process affected by multi--factors such as gasification, melting, oxidation and graphitization. When the discharge current and pulse--on time raise in a certain range, the cutting--off speed and roughness will raise correspondingly.