单量子阱半导体激光器在输出反馈损耗调制方式下的双稳特性

Bistability of a SQW Semiconductor Laser with an Output-feedback Loss-modulation Scheme

利用速率方程求出了输出反馈损耗调制型双稳半导体激光器输出光强稳态解的解析表达式。利用双区共腔ＧａＡｓ／ＡｌＧａＡｓ单量子阱半导体激光器，观测到半导体激光器在输出反馈损耗调制方式下的光双稳特性。比较速率方程解的理论计算曲线和实验观测到的双稳特性曲线后发现，两种双稳特性曲线随反馈损耗调制系数等器件参量变化的规律完全一致。

An analytical expression of the steady-state laser output intensity of a bistable semiconductorlaser of output- feedback loss-modulation has been obtained from rateequations. Using a CCTS GaAs/AlGaAs SQW semiconductor laser, we have observed the bistability arising from output feedback loss modulation in the semiconductor laser. Compering the theoretical curves of bistability obtained from the rate-equations with the experimental P8tt6rns of bistable Characteristics, we found that there is a good agreement between the two kinds of bistability curves when the device's parameters (for example,fedback loss-modulation coefficient et al. ) are changed.