碲化铅薄膜电学特性的研究

Study on Electrical Properties of Pb49Te51 Thin Films

用真空蒸镀法制备了Pb49Te51薄膜，并对薄膜的显微结构、导电类型和电阻率等电学特性及热处理对薄膜性能的影响进行了研究．结果表明：热处理对薄膜结构和性能影响很大，热处理后薄膜呈铜黄色，晶粒有明显取向，其形状为片状，且晶粒尺寸变大为300～400nm；薄膜为p型半导体薄膜，其电阻率4．624×10^-2Ω·cm比晶体材料12．410×10^-2Ω·cm大。

Pb49Te51 polycrystalline thin films were deposited by the vacuum evaporation method. Heated Pb49Te51 thin films were bronze yellow and their microstructure, conducting type and resistivity were also studied. Results obtained show that heat treatment has a great influence on structure and quality of thin films; after heat treatment flaky crystal grains distinctly grow in a certain direction, and heat treatment also greatly increases the crystal grain size to 300～400 nm; Pb49Te51 thin films are p-type semiconductor thin films, and its resistivity is larger than that of lump materials after heat treatment.