摘要
有一扇绝缘的门的新奇 AlaN/GaN 高电子活动性晶体管(HEMT ) 被氧化表明了诱导地使用的 AlGaN 层的表面联合了 O-2plasma。X 光检查光电子光谱学测量表明 O-2 血浆处理能在 AlGaN 表面上生产薄氧化的层。绝缘门的设备被血浆氧化在门 metallization 前认识到。在二个数量级减少的制作 HEMT 过时的人或物的反向的门漏电流，和截止频率从 5.4 GHz 增加到 6.5GHz。
Novel AlGaN/GaN high electron mobility transistors （HEMTs） with an insulated gate have been demonstrated by oxidizing the surface of an AlGaN layer using inductively coupled O2 plasma. X-ray photoelectron spectroscopy measurement reveals that O2 plasma treatment can produce a thin oxidized layer on the AlGaN surface. The insulated-gate devices are realized by plasma oxidization before gate metallization. The reverse gate leakage current of the fabricated HEMT has been reduced in two orders of magnitude, and the cut-off frequency increases from 5.4 GHz to 6.5 GHz.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60244001 and 60390074, the National Key Basic Research Special Foundation of China under Grant No TG2000036601, and the National High Technology Programme of China under Grant No 2003AA311132.
