铜在HOPG上电沉积过程的现场ECSTM研究

In Situ Studies of Copper Electrodepostion on HOPG by Using ECSTM

用自制的电化学扫描隧道显微镜（ＥＣＳＴＭ）现场研究Ｃｕ在ＨＯＰＧ上的电沉积过程．结果表明Ｃｕ在ＨＯＰＧ上的电沉积为三维成核的过程．当电位较低或Ｃｕ２＋离子浓度较低时，铜在本体金属生长主要沿着台阶方向．过电位较高时，铜的成核数目增加，沉积层的晶粒有所细化．同时，非现场ＥＣＳＴＭ比较研究表明，ＳＴＭ针尖对针尖局部区域的电沉积起屏蔽作用。

In this paper, copper electrodepostion on HOPG had been in situ studied by using a homebuilt electrochemical scanning tunneling microscopy (ECSTM). Three dimensional nucleation and subsequent growth of copper crystals were found as the initial stage of copper deposition on HOPG. In the case of lower overpotential or lower concentration of Cu 2+ , the bulk deposited copper layer tended to form smooth terraces, and grow at the edge of steps. The terraces were stable to some extent, which made it possible to be observed with atomic resolution. At a higher overpotential, the crystal size of copper were somehow smaller. By comparing with ex situ STM images, it was found that the deposition rate under the STM tip area was much lower, which might due to the shielding of the STM tip.