纳米隧道结的制备和特性研究

Fabrication and properties of nano metric tunneling junction

结合对向靶直流磁控溅射技术、微电子光刻方法和原子力显微镜阳极氧化加工方法制备了实用的纳米钛-钛氧化线-钛隧道结,钛膜的厚度为3·02nm.钛氧化线的宽度为60·5nm,在室温下此隧道结的I-V曲线表现出明显的库仑阻塞效应.

Applicable nano metric titanium-titanium oxide line-titanium tunneling junction was fabricated with dual-facing target sputtering, micro-electronic optical lithography and atomic force microscope anodic oxidation. The thickness of titanium film of the fabricated junction was 3nm and the width of the titanium oxide line was 60.5nm. The I-V curve of the tunneling junction at room temperature clearly indicates the Coulomb blockade effect.