摘要
借助RF-PECVD辅助RTP技术,采用高沉积气压的技术路线制备了优质的微晶硅薄膜,并利用拉曼光谱、反射谱和透射谱分别研究了微晶硅的晶化率和光学性质.实验中发现微晶硅的吸收边出现了相对红移,此相对红移可归结于薄膜晶化率的提高和带尾态密度的降低.
Using high-deposition-pressure technique, high-quality microcrystalline silicon film was prepared by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) combined with rapid thermal treatment. The volume fractions of the amorphous and microcrystalline phases and optical properties of microcrystalline silicon were carefully studied by Raman spectra, reflectance spectra and transmittance spectra. The results show a red shift of the absorption edge of microcrystalline silicon, which can be due to the increase in the volume fractions of the amorphous and microcrystalline phase and decrease in the band tail states.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第1期98-101,共4页
Acta Physica Sinica
关键词
微晶硅
拉曼光谱
快速热处理
红移
microcrystalline silicon, Raman spectra, rapid thermal treatment, red shift