SiGe HBT大信号等效电路模型

SiGe HBT large signal equivalent circuit model

基于SiGeHBT(异质结双极晶体管)的物理模型,建立了描述SiGeHBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等,模型分为本征和非本征两部分,物理意义清晰,拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下,利用该模型对SiGeHBT器件进行了交直流特性模拟分析,模拟结果与理论分析结果相一致,并且与文献报道的结果符合较好.

A large signal equivalent circuit model for SiGe HBT is established based on the physical model of the transistor. The quasi saturation effect and the self-heating effect are taken into account in this equivalent circuit model. The model is composed of the intrinsic and the extrinsic parts, and has the features of clear physical meaning and simple topology. The model is embedded in the DEVEQ（Device Equations Developer） of PSPICE and simulated and analyzed by the PSPICE. The results conform to the theoretically analyzed conclusion and are in accordance with the published results in the literature.