半导体光磁电效应与系统的非线性特征

Photo-Magnetoelectric Effect in Semiconductors and Its Nonlinear Properties

从Shockley-Read统计出发,引入载流子寿命与浓度的相关性,把载流子的输运方程化为了二阶非线性微分方程,用摄动法找到了方程的一阶近似解,并计算了半导体材料的短路电流和光导电流,揭示了大信号情况下半导体光磁电效应的非线性特征。

The equation of the charged carriers through a semiconductor was reduced to a second order non-linear differential equation by using the injection-level dependent with lifetime which was derived from Shockley-Read statistics. The l-st order approximation solution is derived by the perturbation method. The PME short-circuit current and the photoconductance in a seimiconductor are calculated in 1-st approximation.The non-linear properties of the photo-magnetoelectric effect in the case of large signal are discussed.