摘要
硅材料是现代信息科技的主要载体,而其电化学研究则是正确认识和应用硅材料的前提和基础。从硅的表面和界面特性出发,综述了硅的电化学方面的研究进展,阐述了硅电极的阳极和阴极反应行为,总结了硅的刻蚀以及多孔硅的电化学形成机制和影响因素,并进一步展望了硅材料电化学研究的未来发展方向。
Silicon material is primary carrier of modern information science and technology, and the research on electrochemistry of silicon is the theoretical base of the cognizing and applying silicon material rightly. In this paper, the surface and interface characteristics of silicon are introduced, the latest progresses of research on its electrochemistry are reviewed, the anodie and the cathodal properties of Si electrodes are analyzed, the etching of silicon and formation mechanism of porous silicon and their influencing factors are summarized, and developing direction of electrochemistry of silicon materials in future is pointed out.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2006年第2期21-25,共5页
Materials Reports
基金
国家自然科学基金项目资助(59925412)
湖南省自然科学基金项目资助(03JJY3015)