基于GeSbTe膜的探针存储机制的研究

Study of Data Storage Mechanism with GeSbTe Film based on SPM

针对基于原子力显微镜(AFM)的探针相变存储研究中存储介质和存储方法2个关键问题进行了尝试性的研究。比较了用直流磁控溅射部分不同工艺参数所制备的GeSb2Te4薄膜的表面性能,同时对探针诱导相变机理进行了初步探讨。试验观察的结果表明,利用AFM导电探针对相变化材料GeSb2Te4膜施加一定的直流电压,可以通过形貌和相结构的变化来获得存储的信息点,并且通过施加一定时间的反向电压可以实现信息点的消除。

This paper discusses two key points-recording medium and recording method among the existing problems in the research of tip phase-change recording based on atomic force microscope（AFM）. Surface performance of GeSbTe films prepared by different parameters with DC magnetron sputtering equipment is compared. Meanwhile, the mechanism of tip-inducing phase-change is explored. The experimental results show that when DC or pulsed voltage is applied on the GeSb2Te4 film with conductive AFM tips, topographic change and phase-structural change leads to the formation of nanoscale bits, the bits can be erased by reverse DC voltage with certain duration.