硅体中磷反应扩散系统解的整体存在性及渐近性

The Asymptotic Behavior and Existence of The Global Solution for the Systems of Phosphorus Diffusion in Silicon

本文用上下解方法，研究了一类带混合非齐次边界条件的化学反应──硅体中磷反应扩散系统，采用避开△的特征函数构造上下解的方法，得到一类充分条件，以使其整体解渐近趋向于Ｓｔｅａｄｙ－ｓｔａｔｅ解．

In this paper,a kind of chemical reaction on the phosphorus diffusion in silicon with the mixed nonhomogeneous boundary condition is studied,by constructing a couple appropriate upper and lower solution independent of the eigenfunction of the operator,a sufficient condition which sure the global solution asymptotic convergence to steady-state solution are obtained.