粉料埋烧的TiO_2瓷压敏和介电性质

Influence of Burying Sintering Process on Breakdown Voltage and Dielectric Constant of the TiO_2-Based Varistor

基于一次烧结工艺,采用埋烧和裸烧两种方法制备组分相同的(Sr,Bi,Si,Ta)掺杂的TiO2陶瓷。通过I-V特性、非线性系数、介电常数的测量,研究埋烧与裸烧工艺对TiO2陶瓷的电性能的影响。结果表明,采取粉料埋烧可以明显降低压敏电压、提高介电常数。

Based on single sinter process, （Sr, Bi, Si, Ta）-added TiO2 multifunction ceramics were fabricated by burying sintering and traditional sintering process respectively. By measuring the properties of I-V, nonlinear exponent and apparent dielectric constant, effects of burying sintering process were investigated comparing with those of traditional sintering process on electrical properties of TiO2 multifunction ceramics. The result showed that burying sintering process may make breakdown voltage smaller and apparent dielectric constant bigger.