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水平式隧穿磁强计表头的制作 被引量:2

The Manufacture of the Header of Horizontal Tunneling Magnetometer
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摘要 水平式隧穿磁强计是一种新型隧穿磁强计,其特点是反映磁场变化的洛伦兹力与敏感元件在同一水平面内。该文介绍了这种隧穿磁强计的工作原理,分析了与垂直式隧穿磁强计的区别。给出了表头的加工版图、加工工艺及相应的工艺简图,分析了工艺难点。介绍了按此工艺研制的两种表头:一为直梁式,其加工相对容易、可靠性高;另一种为折叠梁式,其弹性好,位移灵敏度高。SEM照片显示:结构平整、无毛刺。两种结构的表头均进行了封装。 Horizontal tunneling magnetometer is a new kind of tunneling magnetometer in which Lorentz force is in the same level of sensitive element. In this essay, first of all, the operating principle of this kind of magnetometer is introduced and differences between this kind of magnetometer and vertical tunneling magnetometer are analyzed. Then the artwork and the fabrication process are supplied and the difficulty of the process is analyzed. Two kinds of the headers of horizontal tunneling magnetometer based on this process are introduced as well, one with straight movable girders, the other with folding movable girders. Finally the essay also shows that the structure of the head- ers, both of which are sealed, proves to be smooth and without burr by the SEM photos.
出处 《压电与声光》 CSCD 北大核心 2006年第1期48-50,共3页 Piezoelectrics & Acoustooptics
基金 微米纳米加工技术国家重点实验室基金资助
关键词 磁强计 微机电系统 加工工艺 隧穿效应 magnetometer MEMS fabrication process tunnel effectv
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参考文献3

  • 1MILLER L M,KENNY T W,KOVACICH J A,et al.A μ- magnetometer based on electron tunneling [J].Proceedings 1996 IEEE-MEMS Workshop, 1996:467470.
  • 2DILELLA D,WHITMAN L J,COLTON R J,et al. Amicro-machined magnetic-field sensor based on an electron tunneling displacement transducer [J]. Sensors and Actuators, 2000,86:8-20.
  • 3朱俊华,周兆英,叶雄英,张大成,郝一龙,李婷.微型隧道效应磁强计的设计和加工工艺研究[J].微细加工技术,2001(1):53-56. 被引量:4

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同被引文献15

  • 1汤学华,尤政,杨拥军.水平式隧穿磁强计的建模与仿真[J].压电与声光,2005,27(5):566-568. 被引量:4
  • 2汤学华,尤政.水平式隧穿磁强计的性能实验[J].清华大学学报(自然科学版),2006,46(2):203-205. 被引量:3
  • 3阎梅芝,董哲,任大海,尤政.扭摆型隧穿磁强计的设计方法研究[J].仪器仪表学报,2006,27(9):1154-1158. 被引量:2
  • 4汤学华,尤政,胡晓莉.隧穿磁强计驱动电压的理论计算与实验验证[J].传感技术学报,2006,19(05B):2047-2049. 被引量:4
  • 5Miller I. M, Kenny T W, Kovacich JA, et al. A μ- Magnetometer Based on Electron Tunneling[C]//. Proceedings 1996 IEEE- MEMS Workshop, :467-471
  • 6DiLella D,Whitman L J ,Colton R J,et al. A Micro-Machined Magnetic-Field Sensor Based on an Electron Tunneling Displacement Transducer[J]. Sensors and Actuators 86 (1-2),2000:8-20
  • 7Liu C H, Kenny T W. A High-Precision, Wide-Bandwidth Micromachined Tunneling Accelerometer [J ]. Journal of Microeletromechanical Systems, 2001, 10(3): 425-433.
  • 8Kubena R L, Vickers-Kirby D J, Joyce R J, et al. New Tunneling-Based Sensor for Inertial Rotation Rate Measurements[J]. Sensors and Actuators, A: Physical, 2000, 83(1): 109-117.
  • 9Kenny T W, Reynolds J K, Podosek J A, et al. Micromachined Infrared Sensors Using Tunneling Displacement Transducers [J].The Review of Scientific Instruments, 1996, 67(1): 112-128.
  • 10Binnging G, Rohrer H. Scanning Tunneling Microscopy, an Atomic probe[C]//. Scanning Electron Microscopy, Proceeding of Annual Scanning Electron Microscopy Symposium,1983:1079-1082

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