摘要
提出一种以电阻发热实现梁激励的单梁硅基谐振型压力传感器结构。利用硅/硅键合、减薄抛光和IC工艺技术,开展硅基谐振型压力传感器技术的研究,解决了三维体加工与IC工艺兼容的关键技术问题,成功地研制出热激励硅基谐振型压力传感器样品。该器件在常压下测试,其品质因子Q值达到1362.5,证实了该谐振型压力传感器结构是可行的。这为研制硅基谐振型压力传感器提供了一种新的方法。
An electro thermally excited resonance pressure sensor was presented. Using silicon/silicon bonding, grinding and IC process, problems involved in the compatibility of three-dimensional bulk manufacturing and planar IC process have been solved. The.quality factor of the pressure sensor reaches 1362.＇5 at atmosphere, which validates the feasibility of the new structure. This work provides a new method for making Si-based resonance pressure sensors,
出处
《微电子学》
CAS
CSCD
北大核心
2006年第1期9-11,15,共4页
Microelectronics
