摘要
使用专门设计的LDMOS高压器件,实现了一个具有高压驱动能力(±150 V)和大增益(>80 dB)的CMOS运算放大器。模拟结果显示,N沟道和P沟道LDMOS晶体管的最大击穿电压都超过了320 V,高压隔离超过300 V,从而可以确保其高压放大功能。该运算放大器适用于数字通信,如程控交换机中的高压驱动电路的单片集成。
A CMOS operational amplifier （OPA） is implemented with specifically designed high voltage LDMOS, which achieves high voltage driving capability （±150 V） and high gain （〉80 dB）. Simulation demonstrates that the maximum breakdown voltages of N- and P-channel LDMOS are higher than 320 V, and the isolation structure can withstand the voltage over 300 V, which ensure reliable operation of high-voltage amplification, The OPA is suitable for monolithic integration of high voltage driver circuits in digital communication, such as programmable switchboard,
出处
《微电子学》
CAS
CSCD
北大核心
2006年第1期87-89,共3页
Microelectronics
