溶胶凝胶法制备Bi_4Ti_3O_（12）铁电薄膜及电学性质

Preparation and Properties of Ferroelectric Bi_4Ti_3O_(12)Thin Films by Sol-gel Method

以丁醇钛，硝酸铋为原料，用Ｓｏｌ－ｇｅｌ技术制备出Ｂｉ４Ｔｉ３Ｏ１２铁电薄膜。利用ＸＲＤ，ＳＥＭ手段分析了薄膜的结构和表面形貌。结果表明，薄膜呈现单一的展状钙钛矿结构和良好的Ｃ轴择优取向。薄膜在Ｓｉ（１００）衬底和Ｐｔ／Ｔｉ／Ｓｉ衬底上的取向率分别为９０％和６８％，薄膜的表面均匀。测试结果表明，薄膜具有良好的铁电和介电性质，剩余极化强度为５．０μＣ／ｃｍ２，矫顽场强为７０ｋＶ／ｃｍ。

Ferroelectric Bi4Ti3O12 thin films have been prepared on Si and Pt/Ti/Si substrates using Sol-gel method by using of bismuth nitrate and titanium butoxide as starting materials,respectively.The structures of the thin films were examined by the XRD.The results show that the thin films are single phase Bi4Ti2O12 structure and have good c - axis preferred orientation. The oriented ratio of the thin film is about 90%on Si substrate,but is only 68% on Pt/Ti/Si substrate.The surface of thin film is even.The thin films show good dielectric and ferroelectric properties.