摘要
本文采用LPE生长技术,分析、研究了降温、恒温两种方法生长的InAsPSb外延层组分分布。实验结果表明,用恒温方法生长的外延层,P、Sb组分分布均匀不变。
In this paper properties of InAsPSb epitaxy layer grown using both supercooling and stepcooling LPE methods were studied.The solid composition of epitaxial layer was determined by EPMA analysis.The experimental result also indicate that the P and Sb content have almost a constant value for the epitaxy layer grown by the stepcooling LPE method.
出处
《人工晶体学报》
EI
CAS
CSCD
1996年第1期58-61,共4页
Journal of Synthetic Crystals