摘要
本文介绍了把二块(010)TAP晶片,沿不同方向拼接成一块面积扩大一倍的籽晶的方法,其中沿(101)和(101)方向拼接的秆晶可以生长成外形完整透明的晶体;沿(001)和(001)方向拼接的籽晶,在生长过程中拼接区会产生拼接痕迹使拼接失败;沿(100)和(100)方向,以及沿(205)和(205)方向拼接的籽晶在拼接区会形成一个V型凹槽,使晶体生长成独立的两部分,也是不能拼接成功的方向。对不同的拼接结果进行了理论分析讨论。
This paper introduced the method of joining the(010)faces of two TAP crystal plates along different directions into the seed with the area two times larger than that of the single original plate. The joined seed would develop by degrees along(101)and(101)into a single crystal with complete and transparent form. If twoplates were joined along(001)and(001),an irregular joining trace would appear in the joining zone.If two plates were joined along(100),(100)as well as(205),(205),there would be a V-valley over the joining zone,and the two joined plates would develop into independent parts.The joining result was also discussed in detail.
出处
《人工晶体学报》
EI
CAS
CSCD
1996年第1期69-73,共5页
Journal of Synthetic Crystals
基金
福建省自然科学基金
关键词
邻苯二甲酸氢铊
籽晶
拼接
晶体生长
thallium acid phthalate
seed
joining seed
X-ray dispersing crystal