摘要
提出了一种采用0．6μm 1PIM（单层Poly，单层Metal）CMOS工艺的高性能带隙基准电压源电路（BGR）设计。该电路能够在电压范围[4．0V，6．0V]内稳定工作，实现了一阶PTAT（与绝对温度成比例）温度补偿，并具有较好的电源抑制比和较低的温度系数，应用在热释电红外传感器专用控制芯片之中。HSPICE模拟和芯片测试结果表明，其电源抑制比可达到65dB，在0℃～70℃范围内精度可达到23×10^-6／℃，当VDD为5V时功耗仪为158．6945μW。
A high performance CMOS band-gap voltage reference circuit, which is compatible with 0.6μm 1PIM（ 1Poly, 1Metal） CMOS technology is proposed in this paper. The circuit can employ in 4.0V-6.0V range, carry out the first-order PTAT （Proportional To Absolute Temperature） temperature gradient compensation, achieve a high PSRR （Power Supply Rejection Ratio） and low temperature coefficient, and be applied to the design of a controller for pyroelectric infrared sensor. Results from HSPICE simulation and chip test show that the circuit has a PSRR of 65 dB, an accuracy of 23ppm/℃ in the temperature range from 0℃ to 70℃ and a low power consumption of 158. 6945μW when VDD is 5.0V.
出处
《电子工程师》
2006年第2期9-12,共4页
Electronic Engineer
