摘要
利用金属有机化学气相沉积方法在玻璃衬底上生长了掺磷的p型ZnO薄膜.实验采用二乙基锌作为锌源,高纯氧气和五氧化二磷粉末分别作为氧源及磷掺杂源.实验表明生长温度为400～450℃时获得了p型ZnO薄膜,而且在420℃时,其电学性能最好,空穴浓度为1.61×1018cm-3,电阻率为4.64Ω.cm,迁移率为0.838cm2/(V.s).霍尔测试和低温光致发光谱证实了该ZnO薄膜的p型导电特性,并观察到薄膜位于3.354eV与中性受主束缚激子相关的发射峰.
Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition. DEZn,O2, and P2O5 powder are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 400 and 450℃. The best p-type sample has a low resistivity of 4. 64Ω·cm, a hole concentration of 1.61 × 10^18 cm^-3 , and a Hall mobility of 0. 838cm^2/（V · s） at room temperature. A strong emission peak at 3.354eV corresponding to neutral acceptor bound excitons is observed at 77K in the photoluminescence spectra,further verifying the p-type characteristics of the films.
基金
国家重点基础研究专项经费(批准号:G2000068306)
国家自然科学基金(批准号:90201038)资助项目~~
关键词
p-ZnO
金属有机化学气相沉积
磷掺杂
p-type ZnO
metalorganic chemical vapor deposition
phosphorus-doping
