摘要
针对发射到衬底中的光子,提出了一种具有抛物线型衬底结构的InGaN/GaN发光二极管,并对平面衬底和抛物线型衬底InGaN/GaN发光二极管的光子运动轨迹、发射功率角度分布和外量子效率进行了模拟计算.结果表明相对于平面衬底发光二极管,抛物线型衬底发光二极管可以充分利用发射到衬底中的光子,使其正向光子发射功率增加12.6倍,外量子效率提高1.22倍,同时具有发射准平行光的功能.
A new kind of InGaN/GaN light-emitting diode with a parabolic substrate is proposed with special attention to the photon emitted into the substrate. Ray trace,the angular distribution of emitted power, and the external quantum efficiency for plane and parabolic InGaN/GaN light-emitting diodes are simulated and calculated preliminarily, The results show that the parabolic InGaN/GaN light.emitting diode can emit better quasi-parallel light than that with a plane substrate and can effectively utilize the photon emitted into the substrate,resulting in an increase in the emitted power in the forward direction by 12.6 times and an improvement in the external quantum efficiency by 1.22 times.
基金
上海市科委资助项目(批准号:036511008)~~
