期刊文献+

一种用于开关电源启动电路的新型自偏置高压器件结构 被引量:5

A Novel Self-Bias High-Voltage Device Structure for Start-Up Circuit of Off-Line Switching Model Power Supply IC
下载PDF
导出
摘要 设计了一种新的用于离线式集成开关电源启动电路的自偏置高压器件结构.对一个RESURF高压(功率)器件的此种自偏置方法进行了原理分析和仿真模拟.采用该结构集成开关电源的启动电路可以节省芯片面积,降低电路功耗,易于控制且可提供较大的芯片内部电源电压. A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described. The structure and properties of the device, made by RESURF technology, are analyzed and simulated. Using this novel start-up circuit structure for the off-line switching model power supply IC can save the cell area,reduce the power consumption of the circuit, and easily control and supply the larger output voltage.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第1期132-136,共5页 半导体学报(英文版)
基金 国家自然科学基金资助项目(批准号:60476036)~~
关键词 开关电源 启动电路 自偏置 高压器件 switching model power supply start-up circuit self-bias high-voltage device
  • 相关文献

参考文献10

  • 1Sha Zhanyou. The design and application of the novel switching model power supply. Beijing:The Publishing House of Electronics Industry, 2001 ( in Chinese).
  • 2Balakrishnan B. Self powering technique for integrated switched power supply. US Patent 5014178,1991.
  • 3Lei J,Jose S. High voltage start-up circuit and method therefore, US Patent 5640317,1997.
  • 4Lei J,Jose S. High voltage start-up circuit and method therefore. US Patent 5815383,1998.
  • 5Balakrishnan B. Switched mode power supply integrated circuit with start-up self-biasing. US Patent 5285369,1994.
  • 6Tisinger E W,Okada D M. Off-line bootstrap startup circuit.US Patent 5477175,1995.
  • 7Hallberstadt J C. On chip current source. US Patent 6504352 B2,2003.
  • 8Chen Xingbi. Power MOSFET and high voltage integrated circuit. Nanjing:The Publishing Company of the Southeast University,1989(in Chinese).
  • 9Chen Xingbi. A simple theory of floating field limiting rings. Acta Electronica Sinica, 1988,16 (3):6 ( in Chinese).
  • 10Sze S M, Gibbons G. Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs, and GaP. Appl Phys Lett, 1966,8:111.

同被引文献16

引证文献5

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部