CdZnTe单晶的机械抛光及其表面损伤层的测定

Mechanical polishing of CdZnTe single crystal and measurement of surface damage layer

研究了CdZnTe单晶片的机械抛光工艺。采用SiO2和MgO进行分步机械抛光后的晶片光亮平整,在光学显微镜下观察没有划伤,采用New View5000TM测得抛光后晶片的表面粗糙度Ra为8.752nm。采用X射线摇摆曲线的半峰宽表征了表面损伤程度。通过分析不同时间腐蚀后晶片的质量和半峰宽值,计算出机械抛光产生的表面损伤层厚度约为26.7μm。

Mechanical polishing technology of CZT wafers has been studied experimentally. After fractional polishing with SiO2 and MgO, the surface of CZT wafer was bright and smooth, without scratch in the view of optical microscope. The surface roughness was measured by New View 5000TM to be about 8. 752nm. FWHM of X-ray rocking curve was adapted to characterize the surface damage. By comparing the weight lose and FWHM after different etching time,the thickness of the surface damage layer caused by mechnical polishing was determined to be about 26.7μm.