摘要
采用MEMS技术在玻璃基片上制备了夹心结构FeNi／Cu／FeNi多层膜，并在1～40MHz范围内研究了它的巨磁阻抗效应。纵向巨磁阻抗效应先随着外加磁场的增大而迅速增加，在某一磁场下达到最大值后随磁场的增加而逐渐减小。在频率为5MHz时，Hext为0．8kA／m时巨磁阻抗效应最大值达到32．06％。另外，夹心结构多层膜表现出较大的负巨磁阻抗效应，在频率5MHz，Hext=9．6kA／m时，负最大巨磁阻抗效应可达-24．50％。
The sandwiched FeNi/Cu/FeNi films were prepared by MEMS technique on glass substrate. The giant magneto impedance （GMI） effect was investigated in the frequency range of 1～40MHz. With magnetic field Hext applied along the longitudinal direction of the sample, the GMI ratio increases with H reaching a positive maximum at a certain field and then decreases to the negative GMI ratio with further increase of H At a frequency of 5MHz, the positive maximum GMI ratio is 32.06% for Hext=0.8kA/m. In addition, with the magnetic field applied along the transverse direction, the GMI ratio is negative, -24.50% is obtained at 5MHz for Hext=9. 6kA/m.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2006年第2期194-196,199,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50275096
10402023)
上海市纳米专项资助项目(0352nm014)
教育部重大科研资助项目(重大0307)
