用射频磁控溅射法制备的Zn_(1-x)Mg_xO薄膜光致发光特性(英文)

Photoluminescence property of Zn_(1-x)Mg_xO films grown by RF magnetron sputtering

用射频磁控溅射法在Si（100）衬底上生长了一组Zn1-xMgxO（x=0～0．16）薄膜。并在不同温度下退火。对薄膜的光致发光研究表明，在薄膜的发射谱的紫外区域有分别对应自由激子（以及相应的声子伴线）和电子-空穴等离子体的发光机制，其中后者有5倍超线性的受激发射，其受激发射闾值与薄膜的退火温度相关，样品中最低受激阅值为40kW／cm^2。

A series Zn1-xMgxO （x= 0～0.16） films grown on Si（100） substrate were prepared by RF magnetron sputtering and annealed at different temperature. The UV emission peaks of free exciton （and assisted phonon replicas） and electron-hole plasma （E-H） were found in the photoluminescence （PL） from the Zn1-xMgxO films, where the E-H has a five-time super-linear enhanced lasing effect. The blue shift of the UV peaks in the photoluminescence spectra is found to be associated with increasing Mg content in Zn1-xMgxO films, and the peaks intensity is also reinforced significantly as increasing the annealing temperature. The minimum lasing threshold of the samples is 40kW/cm^2.