氧流量对铟锡氧化物薄膜光电性能的影响

Effects of Oxygen Flow on the Photoelectricity Properties of In_2O_3-SnO_2 Films

采用射频磁控溅射法,在不同氧流量(0~10sccm)的条件下沉积了铟锡氧化物(In2O3-SnO2)透明导电薄膜。紫外分光光度计测试薄膜的透射率,四点探针测试薄膜的方阻,椭偏仪测试薄膜的复折射率和薄膜厚度,XPS测试ITO薄膜的成分和电子结构。结果表明:薄膜的沉积速率和折射率与氧流量有关,薄膜厚度为60nm,氧流量在9sccm时,透射率超过80%(波长λ=400nm^700nm,包括玻璃基体),退火后透射率、方阻明显改善。XPS分析表明,薄膜中的亚氧化物的存在降低了薄膜的光电性能,控制氧流量可减少亚氧化物。

Indium tin oxide films （ In2O3-SnO2 ） were deposited onto glass at different oxygen flows by R.F. magnetron sputtering method. Transmittance in visible light and an energy band gap were measured by ultraviolet spectrophotometer, square resistance was measured by four-point probe. The thickness and complex refractive index of films were measured by spectroscopic ellipsomtry. The component of the ITO films was studied by XPS. The study indicates that the deposited ratio and refractive indexes of films are related to the o2 flow rate, The transmittance in visible light is beyond 80% （including glass substrate） with the film thickness 60nm and 9seem oxygen flux. The transmittance and square resistance can be improved by hot treatment. XPS investigation shows that the photoelectricity properties can be deteriorated by the sub-oxides, which can be reduced by oxygen flux.