离子注入半导体的激光退火

aser annealing of ion-implanted semiconductors

本文报导了半导体激光退火在国内外的进展概况,作为离于注入半导体生产工艺的“伴星”,激光退火有可能取代常规的高温退火工艺而被采用。

Progress in laser annealing of semiconductor both in this country and abroad are reported. It is possible that laser annealing, as an auxiliary means in the production of ion-implanted semiconductors, will be employed to replace the conventional high temperature annealing.