大规模集成电路掩模缺陷激光修正技术

Laser repair techuipue fos Lsi photomasrs

本文介绍了用激光投影系统汽化C_r板的技术。可在C_r板上汽化出3μm×3μm至80μm×80μm的矩形方孔,最细线宽1μm的线条,最小直径φ1.5μm的园形孔。汽化质量已达到修正LSI掩模缺陷的使用要求。讨论了汽化质量与激光参数的关系。

This paper reports a techique of evaporating films of Cr, using laser projected system. Experiment has evaporated rectangular hols 3μm×3μmto 8μm×8μm lines minimum width 1μm,circles minimum diameter Ф1.5μm.The quality of evaporated holes has attainted the criterion for repair defect of LSI photomasks.We have discussed the dependence of the dimension and quality of the evaporated holes on the laser parameters.