摘要
制备了结构为ITO/TPD/Zn(BTZ)2Al的有机电致发光(EL)器件,经测试发现,Zn(BTZ)2发光层厚度对器件EL光谱有较大影响。当Zn(BTZ)2层厚度分别被控制在50和80nm时,EL谱中都只有1个峰,其峰值分别为580和470nm;当Zn(BTZ)2层厚度被控制在50~80nm时,EL谱同时出现470和580nm的2个峰,且它们的相对发光强度与Zn(BTZ)2层厚度也有关系,随着Zn(BTZ)2层厚度越接近80nm(或50nm)时,EL谱峰值为470nm的光就相对越强(或弱),峰值为580nm的光就相对越弱(或强)。通过调整Zn(BTZ)2层厚度,在65nm左右时得到色度较好的白光器件,其色坐标为(0.33,0.33)。为了研究器件的光致发光(PL)谱,制备结构为TPD/Zn(BTZ)2的有机薄膜,经测试发现,薄膜PL谱与Zn(BTZ)2层厚度无关,其光谱峰值在480nm处,与相关文献报道一致。对上述现象进行了分析。
By fabricating white organic light-emitting devices of ITO/TPD/Zn(BTZ)2/AI ,we found out that the EL spectra of the devices depended on the thickness of Zn(BTZ)2 layer. When the thickness of Zn(BTZ)2 was controlled at 80 nm,the EL spectra had one peak at 470 nm. When the thickness was controlled at 50 nm,the EL spectra had one peak at 580 nm. If the thickness was between 50 nm and 80 nm, the EL spectra simultaneously appeared two peaks at 470 nm and 580 nm,and the relative electroluminescence intensity also depended on the thickness. The more the thickness of Zn(BTZ)2 closed to 80 nm (50 nm) ,the stronger 470 nm (580 nm) peak's intensity. When the thickness was coordinated to 65 nm,we got the white devices with CIE coordinated at (0.33,0.33). To study the PL spectra of the device,we fabricated a thin film of TPD/Zn(BTZ)2. The PL spectra didn't depend on the thickness of Zn(BTZ)2 ,and it's peak at 480 nm was in agreement with other reDorts. The PaPer analyzed the above phenomenon.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2006年第2期147-150,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金资助项目(60276027)
天津市自然科学重点基金资助项目(023800511
033800311)
天津市自然科学面上基金资助项目(033601211)
天津市高校科技发展基金资助项目(9903114)
天津市重点学科资助项目(023800511)