摘要
应用线性组合算符和微扰法研究了电子自旋对SIC半导体性质的影响。基态能量E0+(对应于电子自旋量子数为正)和E0-(对应于电子自旋量子数为负)都随磁场增加而线性减少:在0 T时,E0+和E0-都为-76.24 MEV;在25 T时,E0+和E0-分别为-68.50 MEV和-71.39 MEV。自旋能量与E0+和E0-之比P0+和P0-都随磁场增加而快速增加:在0 T时,P0+和P0-都为0;在20 T时,P0+为0.627;在25 T时,P0-为0.453。自旋能量与LANDAU基态能量之比P2始终为0.23。自旋能量与自能和声子之间相互作用能量之比P1和P3都随磁场增加而线性增加:在0 T时,P1和P3都为0;在5 T时,P3为0.628;在40 T时,P1为0.306。这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
Using linear combination operator and perturbation method, the influences of electron spin on the properties of SiC is studied. Ground state energy E0^+ (E0^-) that the spin quantum number is plus (minus) decreases linearly with the magnetic field B increasing. E0^+ and E0^- are -76.24 meV at 0 T. E0^+ (E0^-) is -68.50 meV (-71.39 meV) at 25 T. The ratio P0^+ (P0^-) of spin energy to E0^+ (E0^-) increases rapidly with B increasing. P0^+ and P0^- are 0 at 0 T. P0^+ (P0^-) is 0. 627 (0.453) at 20 T (25 T).The ratio P2 of spin energy to Landau ground state energy is always 0.23. The ratio P1 ( P3 ) of spin energy to self-energy (energy of interaction between phonons) increases linearly with B increasing. P1 and P3 are 0 at 0 T. P1(P3) is 0.306 (0.628) at 40 T(5 T).These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
2006年第2期248-252,共5页
Journal of Optoelectronics·Laser
基金
山东省自然科学基金资助项目(Y2003A01)
关键词
SIC
半导体
电子白旋
弱耦合二维磁极化子
基态能量
SiC
semiconductor
electron spin
weak-coupling 2-D magnetopolaron
ground state energy