自旋对SIC半导体二维磁极化子基态能量的影响

Influences of Electron Spin on Ground State Energy of Weak-coupling 2-D Magnetopolaron in SiC Semiconductor

应用线性组合算符和微扰法研究了电子自旋对SIC半导体性质的影响。基态能量E0+(对应于电子自旋量子数为正)和E0-(对应于电子自旋量子数为负)都随磁场增加而线性减少:在0 T时,E0+和E0-都为-76.24 MEV;在25 T时,E0+和E0-分别为-68.50 MEV和-71.39 MEV。自旋能量与E0+和E0-之比P0+和P0-都随磁场增加而快速增加:在0 T时,P0+和P0-都为0;在20 T时,P0+为0.627;在25 T时,P0-为0.453。自旋能量与LANDAU基态能量之比P2始终为0.23。自旋能量与自能和声子之间相互作用能量之比P1和P3都随磁场增加而线性增加:在0 T时,P1和P3都为0;在5 T时,P3为0.628;在40 T时,P1为0.306。这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。

Using linear combination operator and perturbation method, the influences of electron spin on the properties of SiC is studied. Ground state energy E0^＋ （E0^-） that the spin quantum number is plus （minus） decreases linearly with the magnetic field B increasing. E0^＋ and E0^- are -76.24 meV at 0 T. E0^＋ （E0^-） is -68.50 meV （-71.39 meV） at 25 T. The ratio P0^＋ （P0^-） of spin energy to E0^＋ （E0^-） increases rapidly with B increasing. P0^＋ and P0^- are 0 at 0 T. P0^＋ （P0^-） is 0. 627 （0.453） at 20 T （25 T）.The ratio P2 of spin energy to Landau ground state energy is always 0.23. The ratio P1 （ P3 ） of spin energy to self-energy （energy of interaction between phonons） increases linearly with B increasing. P1 and P3 are 0 at 0 T. P1（P3） is 0.306 （0.628） at 40 T（5 T）.These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.