提高Si基材料高效率发光途径的探索

SEARCH FOR PROMOTION OF LUMINESCENT EFFICIENCY ON SILICON BASED MATERIALS

近来人们对发展硅基光电子学作出了很大的努力。众所周知，如同晶体管是微电子学的核心器件一样，发光器件将是光电子学的关键部件。然而由于硅属间接带隙材料，发光效率比直接带隙的ＧａＡｓ等化合物材料低三个多量级，因此如何在硅基材料系实现高效率发光，已成为发展硅基光电子学的重要课题，它吸收着国际上众多科学、工程家们的巨大兴趣。能带工程的应用可能将提供一条有望的途径。本文总结评述了近几年来在ＳｉＧｅ量子阱能带工程，Ｅｒ３＋离子注入发光中心掺杂工程、直接带隙β—ＦｅＳｉ２材料工程以及热电子跃迁发光带内子能级工程中所取得的重要进展。本文同时对其未来的发展提出了若干设想与展望。

Many efforts have been made to develope silicon based optoelectronics.It is well known that semoconductor transistors are the main elements to compose microelectronic technologies while light emission devices and laser devices are the key parts of optoelectronics,but,silicon,with a indirect bandgap,has a three order of magnitude lower light emission efficiency than GaAs.So,how to realize high light emission efficiency of silicon based materials is an important topic concerning the development of silicon based optoelectronics,and has attracted much attention of scientists all over the world.The application of energy band engineering may promise a good future in this area. In this paper the current progress on energy band engineering of SiGe quantum wells,the doping engineering of ion implantation of Er 3+ light emission center and the new materials engineering of β FeSi 2 with direct bandgap and hot electrons transition luminesence from innerband energy level system are summarized.Furthermore,some of our tentative ideas on these topics are also put forward.