摘要
针对Ge薄膜应力较大的特点,采用热蒸发方式制备Ge膜。研究了不同脱膜剂和基片温度对Ge膜结构的影响。采用新的反粘脱膜工艺,制备出了比较满意的Ge薄膜靶。
In accordance with strong internal stress of germanium foil, the foil is prepared on glass substrate with different removers using thermal evaporation technique. The structures of foil derived from different preparation process are analysed. A new remover and a special process are used to obtain germanium foil targets with high quality.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1996年第1期8-16,共9页
Atomic Energy Science and Technology
基金
国家高技术强激光领域基金