离子注入法制备超薄氚源

AN ULTRATHIN TRITIUM SOURCE PREPARED BY ION IMPLANTATION

叙述了一种用于中微子静止质量测量的大面积高活度氚源的离子注入制备过程。氚注入在微晶玻璃基板上的碳膜中，由此获得窄条形（０．２ｍｍ宽）、大面积（４０×３０ｍｍ２）、高活度（约２０ＭＢｑ／ｃｍ２）、氚分布均匀（９５％）、氖注入厚度为２μｇ／ｃｍ２、氚的逃逸速度≤４×１０２Ｂｑ／ｈ的氚源。

The preparation of a tritium source with large area and high activity by ion implantation for measurement of the rest mass of neutrion is described. Tritium is implanted into the carbon coating on the microcrystalline glass plate. The obtained tritium source is striped with 0. 2 mm of stripe width and provides 40 × 30 mm2 of the area, 20 MBq/cm2 of the activity, 95 % of the activity distribution uniformity, 2 μg/cm2 of the depth of tritium implantation and 4 × 102 Bq/h of the tritium release rate.