n-Hg_（1－x）Cd_xTe中复合中心

RECOMBINATION CENTRES IN n TYPE Hg 1- x Cd x Te

利用深能级瞬态谱（ＤＬＴＳ）研究了Ｈｇ１－ｘＣｄｘＴｅ（ｘ＝０．４）ｐ＋ｎ结中Ｈ２（０．２９）空穴陷阱的俘获机制，发现它不满足级联复合机制或俄歇复合机制，该能级俘获截面的温度关系满足σ（Ｔ）＝σ∞ｅｘｐ（－ＥＢ／ｋＴ）形式。

The capture mechanism of H 2(0.29) hole trap in the p +n junction of Hg 1- x Cd x Te( x =0.4) by using Deep Level Transient Spectroscopy (DLTS) was investigated. It was found that it does not satisfy the mechanism of cascade or Auger recombination. The temperature dependence of the hole capture cross section of H 2(0.29) satisfied σ(T)=σ ∞exp (- E B/kT ).It reflects that the multiphonon nonradiative recombination mechanism is the decisive one.