聚焦Ga^+离子束注入方法研制半导体量子线结构

THE METHOD OF FOCUSED Ga^+ ION BEAM IMPLANTATION TO FABRICATE SEMICONDUCTOR QUANTUM WELL WIRE

采用聚焦Ga^+离子束注入方法,在GaAs/Al_(0.3)Ga_(0.7)As多量子阱材料上尝试制备半导体量子线。通过低温光致发光谱,测量了量子线的光电特性,并观察了由于沟道效应导致的深层量子阱的光谱蓝移。

Focused Ga+ ion beam implantation was used to make the semiconductor quantum well wire in GaAs/Al0.3Ga0.7As multi-quantum well structure. Making use of the low temperaturer PL spectra, we studied the optoelectronic properties of the quantum wire, and observed the blue shift caused by the channel effect in deep quantum well.