Pd，Ge薄膜体系中的分形晶化行为

BEHAVIOUR OF THE FRACTAL CRYSTALLIZATION IN Pd, Ge THIN FILM SYSTEM

利用透射电子显微镜（ＴＥＭ）对有化合物生成（Ｐｄ＿２Ｇｅ和ＰｄＧｅ等）的Ｐｄ，Ｇｅ薄膜体系中的分形晶化行为进行了系统研究实验结果和分析表明：在各种退火温度条件下，Ｐｄ－Ｇｅ共蒸膜都难以发生分形晶化，Ｐｄ／ａ－Ｇｅ双层膜较ａ－Ｇｅ／Ｐｄ双层膜更容易导致分形结构的产生Ｚ化合物Ｐｄ＿２Ｇｅ和ＰｄＧｅ的形成对薄膜中的分形晶化有明显的抑制作用，体系中能否出现分形结构，取决于非晶Ｇｅ的成核生长和Ｐｄ，Ｇｅ化学反应两种过程的相互竟争．

The behaviour of the fractal crystallization in Pd, Ge thin film system of various ratios ofthickness (or composition) after annealing have been investigated by transmission electronmicroscopy (TEM). It was difficult for the coevaporated Pd-Ge films to realize the fractalcrystallization. The production of the fractal structure in Pd/a-Ge bilayers was easier thanthat in a-Ge/Pd bilayers. The fractal crystallizations were restrainted because of the formationof the compounds (Pd-2Ge and PdGe) in Pd, Ge bilayers. The growting of the fractal struc ture depends on the competition of the two precesses of a-Ge crystallization and compoundformation.