摘要
详细研究了行波半导体光放大器的增益波动特性，理论模型的建立舍弃了通常采用的载流子在光放大器中沿腔长方向均匀分布的假设。分析表明，光放大器增益波动的大小与器件端面反射率、自发发射因子以及入射光功率等因素有关。
The gain ripple characteristics in traveling wave semiconductor optical amplifiers (TW SOAs) are studied in detail. A uniform carrier distribution along the cavity length in a TW SOA is usually assumed in many previous papers. However the theoretical model proposed in this paper accounts for the spatial dependence of the carrier density. Gain ripple value changes with the residual facet reflectivity, spontaneous emission factor, and incident optical power, etc. Good agreement was obtained between the calculated data and the experimental results.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1996年第2期137-141,共5页
Acta Optica Sinica
基金
国家教委博士点基金
关键词
行波
半导体光放大器
增益饱和
增益波动
a traveling wave semiconductor optical amplifier, gain saturation, gain ripple, the spatial dependence of the carrier density
