摘要
垂直腔半导体光放大器(VCSOAs)的带宽通常较窄,通过改变其有源区一侧的DBR膜堆结构,构造无源腔与原有源腔相耦合的耦合腔结构可优化VCSOAs带宽。基于该结构模型,在反射工作模式下,利用传输矩阵方法对双腔和三腔结构的VCSOAs的增益带宽特性进行了分析。结果表明,在10dB的峰值增益水平下、带宽扩展至3nm以上,较单腔结构有了很大的提高,具有一定的现实参考意义。
The bandwidth of the vertical-cavity semiconductor optical amplifiers（VCSOAs） is commonly narrow. A VCSOAs using a coupled-cavity design to broaden the bandwidth is proposed. The coupled-cavity is made by changing the structure of the distributed Bragg reflector（DBRs） on one side of the active region to construct the passive cavity coupled with the active region. Based on this model and under the reflection mode, the characters of the gain bandwidth of the two cavities and three cavities structure are calcucated. With the transfers matrix method. It is found that the bandwidth is increased to above 3nm at the 10dB peak gain levd. It has a great improvement compared to simple cavity structure.
出处
《激光技术》
CAS
CSCD
北大核心
2006年第1期60-63,共4页
Laser Technology
基金
国家自然科学基金资助项目(10174057)
高等学校博士学科点专项科研基金资助项目(20030613007)
