非制冷热成像系统偏置电压的数值分析

Bias Voltage Numerical Analysis of Uncooled Thermal Imaging System

在微测辐射热计理论分析的基础上，利用数值计算的方法讨论了偏置电压与噪声、噪声等效温差（NETD）及探测率D性能参数的关系，确定了微测辐射热计最佳偏置电压范围在1．0～4．0V，在该范围内可以获取67．7～41．1mK的NETD，6．1×10^9～1．15×10^10cmHz^1/2／W的探测率，品质因子达到2．6～1．4。在1．0～4．0V的偏置电压范围内，探测器的性能可达到最优化。

Based on the theoretical analysis of a microbolometer, the relationship of the bias voltage with noise, noise equivalent temperature difference （NETD） and detectivity D was discussed by a numerical calculation method. The best bias voltage of microbolometer ranges from 1.0 to 4.0 V, between which the NETD ranges from 67.7 to 41.1 mK, the detectivity （D） ranges from 6.1×10^9 to 1.15×10^10 cmHz^1/2/ W , and the quality factor （Q） ranges from 1.5 to 1.21. In the 1.0 to 4.0 V bias voltage ranges, the detector＇s performance can be optimized.