金属有机化合物汽相淀积技术制备布拉格反射镜确定外延厚度的方法

Determining method of the thickness of the distributed Bragg reflector grown by metal-organic chemical vapor depositon

外延膜层厚度的精确性对垂直腔面发射激光器(VCSEL)是十分重要的。应用传输矩阵方法分析了厚度偏差对半导体布拉格反射镜(DBR)反射谱的影响,并利用这种影响提出了一种金属有机化合物汽相淀积(MOCVD)制备布拉格反射镜精确确定外延厚度的方法。据此,应用MOCVD生长了980 nmVCSEL外延片,其反射谱中心波长为982 nm。结果表明,应用这种方法能够实现材料厚度、MOCVD系统生长参数的定标以及为VCSEL的材料生长提供可靠的依据。

For a vertical-cavity surface-emitting laser （VCSEL）, the epilayer thickness accuracy is very important. The influence of the thickness deviation on the reflection spectrum of semiconductor materials DBR was analyzed using the transfer matrix method. By the influence, a determining method of the thickness of the DBR grown by MOCVD was presented. Based on the approach, the 980 nm VCSEL wafer was grown by MOCVD, in which center wavelength of the VCSEL reflection spectrum is 982 nm. The results show that the method can be used in verifying the thickness of the epitaxy materials and growth parameters of the MOCVD and growth. provide the reliable information for the VCSEL growth.