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TiO_x层在Pt/Ti电极中对Ti扩散的抑制作用 被引量：2

Control of the Ti Out-diffusion in Pt/Ti Bottom Electrode for Ferroelectric Thin Film
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摘要 采用直流磁控溅射方法在SiO2/Si衬底上制备出Pt/Ti和Pt/TiOx底电极。用XRD分析其晶相结构,用AFM测量其晶粒尺寸和表面粗糙度。结果表明,用TiOx层代替金属Ti后,能有效地抑制在高温环境下Ti原子向Pt层扩散,使电极表面粗糙度减小(粗糙度为2.99 nm)。 Pt/Ti and Pt/TiOx bottom electrodes were prepared on SiO2/Si substrate by DC-sputtering method. The X-ray measurements allowed us to get the crystal orientation and microstructure of the Pt electrodes. The size of grain and roughness of Pt/Ti or Pt/TiOx bottom electrodes caused by Ti out-diffusion before and after RTA treatment were observed by AFM. The results show that the roughness of Pt/Ti bottom electrode increases much higher and hillocks are formed after high temperature treatment, However, the surface of Pt/TiOx bottom electrode keeps quite flat （roughness is 2.99 nm）.
作者 张柏顺 何军 章天金
机构地区 湖北大学物理学与电子技术学院
出处 《电子元件与材料》 CAS CSCD 北大核心 2006年第3期24-26,共3页 Electronic Components And Materials
基金 湖北省自然科学基金资助项目(2003ABA066)
关键词 电子技术 铁电薄膜 PT/TI电极 粗糙度 Ti扩散 electronic technology ferroelectric tnin film Pt/Ti electrode roughness Ti out-diffusion
分类号 TM22 [一般工业技术—材料科学与工程]
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参考文献10

  • 1Ruey-Ven W,Mclntyre P C.Point defect distributions and their electrical effects on (Ba,Sr) TiO3/Pt thin films[J].J Appl Phys,2003,94:1926-1933.
  • 2Wang Z J,Chu J R,Ryotrao,et al.Effect of bottom electrodes on microstructures and electrical properties of sol-gel derived Pb(Zr0.53Ti0.47)O3 thin films[J].Thin solid films,2002,416:66-71.
  • 3Lee S G,Kim K T,Lee Y H.Characterization of lead zirconate titanate heterolayered thin film prepared on Pt/Ti/SiO2 substrate by the sol-gel method[J].Thin solid films,2000,372:45-49.
  • 4Zhitang S,Chenglu L.Microstructure and electrical properties of PbZr0.48Ti0.53O3 ferro-electric films on different Pt bottom electrodes[J].Appl Sur Sci,2000,158:21-27.
  • 5Yoon K H,Sohn J H,Lee B D.Effect of LaNiO3 interlayer on dielectric properties of (Ba0.5Sr0.5)TiO3 thin films deposited on differerntly oriented Pt electrodes[J].Appl Phys Lett,2002,81:5012-5014.
  • 6Velu G,Remiens D.Electrical properties of sputtered PZT films on stabilized platinum electrode[J].J Eur Ceram Soc,1999,19:2005-2013.
  • 7Kondo Ichihara,Yoneyama Takae.Formation of high adhesive and pure Pt layers on TiO2[J].J Vac Sci Technol,1992,A10(6):3456-3459.
  • 8Takamura K,Abe Y,Sasaki K.Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO2 films by reactive sputtering[J].Vacuum,2004,74:397-401.
  • 9Millon C,Malhaire C,Dubois C,et al.Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers[J].Mater Sci in Semiconduct Proc,2003,5:243-247.
  • 10Nam H J,Choi D K,Lee W J.Formation of hillocks in Pt/Ti electrodes and their effects on short phenomena of PZT films deposited by reactive sputtering[J].Thin Solid Films,2000,371:264-271.

同被引文献13

  • 1HWANG C S, LEE B K, KANG C S. Depletion layer thickness and schottky type carrier injection at the interface between Pt electrodes and(Ba,Sr)TiO3 thin film [J] .JAP,1999,45(1):287-295.
  • 2ALPAY S P, MISIRLIOGLU I B, NAGARAJAN V. Can interface dislocations degrade ferroelectric properties [J]. APL, 2004,85 ( 11 ) : 2044-2046.
  • 3LARSEN P K, DORMANS G J M, TAYLOR D J. Fermelectric properties and fatigue of PbZro.51 Tio.4o 03 thin films of varying thickness:Blocking layer model [J] .JAP,1994,76(4):2405-2413.
  • 4BRATKOVSHY A M, LEVANYUK A P. Very large dielectric response of thin ferroelectrie films with the dead layers [J]. PRB, 2001,63(13) : 132103-132106.
  • 5JIANG A Q, LIN Y Y, TANG T A. Evaluation of interfacial- layer capacitance from fast polarization retention in ferroeleetrie thin films [ J ]. JAP, 2007,101 (5) : 56-103.
  • 6JIANG A Q, LIN Y Y,TANG T A. Interfacial-layer modulation of domain switching current in ferroelectric thin films [ J ]. JAP, 2007,101 (10) : 104-105.
  • 7JIANG A Q, LIN Y Y, TANG T A. Evaluation of interfaciallayer capacitance from fast polarization retention in ferroelectric thin films [J] .JAP,2007,101(5):56-103.
  • 8JIANG A Q, LIN Y Y, TANG T A. Nanosecond-range measurements of imprint effect for Pt/IrO2/Pb ( Zr0.4 Ti0.6 ) O3/ IrO2/Pt thin-film capacitors [J] .APL,2007,91(20):202-906.
  • 9Zhibin HUANG Wancheng ZHOU Xiufeng TANG.Application of low-emissivity Pt layer on Ni alloy to high temperature[J].Acta Metallurgica Sinica(English Letters),2010,23(1):1-7. 被引量：2
  • 10黄智斌,周万城,唐秀凤,罗发,朱冬梅.磁控溅射Ni/Au/Pt多层膜红外发射率特征研究[J].稀有金属材料与工程,2011,40(3):534-537. 被引量：5

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电子元件与材料
2006年 第3期

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