期刊文献+

制备CdTe多晶薄膜升温过程的研究 被引量:1

A studies of the increasing-temperature process of CdTe polycrystalline films preparation
下载PDF
导出
摘要 采用近空间升华沉积法CSS(Close space sublimation),在3种不同升温过程中沉积制备CdTe多晶薄膜,通过实验数据作出其升温曲线,采用扫描电镜(SEM)、X射线衍射(XRD)、微电流高阻计等方法对沉积膜的性能进行测试分析.研究了在CSS法中控制升温过程对CdTe生长沉积机制及其沉积质量的影响.结果表明升温过程对CdTe多晶薄膜的沉积过程有重要的影响.其中,以氢气刻蚀后拉开衬底与升华源之间的设定温差,并保持固定温差至设定温度的升温过程的沉积质量最佳. A closed-space sublimation technology is used to prepared CdTe polycrystalline thin films on the three different temperature-increasing processes. The performance of the CdTe thin film was investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD). In the paper, the effects of curves of increasing temperature to the CdTe films growing in CSS were studied and increasing temperature curves have been optimized. The results showed that temperature-increasing process has very important influence in depositing CdTe polycrystalline thin films in CSS. Among them, the best method is that which pulls difference in temperature first and keeps difference in temperature to the initialization temperature.
出处 《兰州大学学报(自然科学版)》 CAS CSCD 北大核心 2006年第1期63-66,共4页 Journal of Lanzhou University(Natural Sciences)
基金 国家863重点基金资助项目(2001AA513010).
关键词 CdTe多晶薄膜 近空间升华沉积法 太阳能电池 CdTe polycrystalline fihn close-space sublimation solar cells
  • 相关文献

参考文献6

  • 1CHU T L, CHU S S. Thin film Ⅱ-Ⅵ photovoltaics[J]. Solid-state Electronis, 1955, 38(3): 533-549.
  • 2ARAMOTO T, KUMAZAWA S, HIGUCHI H, et al. 16% efficient thin film CdS/CdTe solar cells[J]. Jpn J Appl Phys,1997, 36(10): 6304-6305.
  • 3MOUTINHO H R, HASOON F S, ABULFOTUH F, et al. Effects of CdCl2 treatment on the recrystallization and electro-optical properties of CdTe thin films[J]. Vac Sci & Technl A, 1995, 13(6): 2877-2879.
  • 4CHAKRABARTI R S, GHOSH S C. Stability testing of CdS/CdTe thin-film photovoltaic modules[J]. Phys D Appl Phys, 1999, 32(11): 1258-1262.
  • 5冯良桓,蔡伟,郑家贵,蔡亚平,黎兵,张静全,武莉莉,朱居木,邵烨.碲化锌复合背接触层对碲化镉太阳电池性能的影响[J].太阳能学报,2001,22(4):401-408. 被引量:24
  • 6蔡伟,张静全,郑家贵,黎兵,蔡亚平,武莉莉,邵烨,冯良桓.近空间升华法制备CdTe薄膜[J].半导体光电,2001,22(2):121-123. 被引量:13

二级参考文献4

共引文献32

同被引文献1

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部