摘要
高效高亮度GaN基发光二极管(LED)在图像显示、信号指示、照明以及基础研究等方面有着极为广阔的应用前景,器件的可靠性是实现其广泛应用的保证。本文从封装材料退化、金属的电迁移、p型欧姆接触退化、深能级与非辐射复合中心增加等方面介绍了GaN基LED的退化机理以及提高器件可靠性的措施,并对GaN基LED的应用前景进行了展望。
High-brightness, high-efficiency GaN-based LEDs are of extreme promise in image display, signal indication, lighting and basic research, while reliability ensures the broad applications. This work presents the degradation mechanisms of GaN-based LED including degradation of the encapsulating material, electromigration of contact metal, p-W contact degradation, creation of deep levels and non-radiative recombination centers, and the measures improving reliability of the device. The foreground of GaN-based LEDs is overviewed.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第3期161-165,共5页
Semiconductor Technology
基金
国家863重点项目(2004AA311030)北京市教育委员会科技发展计划重点项目(KZ200510005003)
