摘要
通过对多芯片组件(MCM)的结构、失效模式和机理的分析,提出了适合我国生产实际的MCM 失效率预计模型。采用加速寿命试验和点估计法获得了膜电阻的基本失效率λRT和布线与工艺基本失效率λC;并采用极限应力对比试验获得了层间系数πcp。
The structure, failure model and mechanism of MCM are analyzed and the failure rate prediction model for MCM is presented. By accelerated life test and point estimate method the basic failure rate λRT and λc are obtained. The coefficient πcp is got by ultimate stress comparison testing.
出处
《半导体技术》
CAS
CSCD
北大核心
2006年第3期203-206,共4页
Semiconductor Technology
基金
总装预研项目(41323060303)
