High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers
High Power SiGe X-Band (8～10GHz) Heterojunction Bipolar Transistors and Amplifiers
基金
ProjectsupportedbytheNSF(No.ECS0323717)
关键词
晶体管
放大器
基极
发射极
掺杂
common-base
common-emitter, doping profile
load-pull
MMIC
SiGe heterojunction bipolartransistors
参考文献4
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